【终极转载】美国计算机历史博物馆展览-内存和存储之12MOS DRAM取代磁芯阵列
Mostek 4096-bit (4K) DRAM, 1973
Advanced process and design techniques allowed start-up Mostek to squeeze the MK4096 (mask shown here) into a compact 16-pin package that became the industry standard.
有道翻译
Mostek 4096位（4K）DRAM，1973年
先进的工艺和设计技术使初创公司Mostek能够将MK4096（此处所示的掩模）压缩成紧凑的16引脚封装，成为行业标准。
MOS DRAMs Replace Magnetic Core Arrays
By the early 1970s, dynamic circuit designs, coupled with the silicon gate MOS (Metal-Oxide-Silicon) process, made DRAM chips competitive in cost with magnetic cores.
Introduced at 1¢ per bit, Intel’s 1024-bit 1103 DRAM opened the market for semiconductor main memory. In 1972, IBM pioneered a fast N-channel MOS process for its System 370 Model 158 and quickly became the world’s largest semiconductor memory manufacturer.
For the next 30 years, advances in technology—coupled with aggressive international competition—increased density by a factor of four approximately every three years. A 4K-bit device arrived in 1973, the 16K in 1976 and the 64K in 1979. The first gigabit (1,000 million bits) DRAM arrived in 2000. Every increase in density brought a corresponding decrease in cost that opened up new applications in PCs, games, and portable electronic products.
有道翻译
MOS DRAM取代磁芯阵列
到20世纪70年代早期，动态电路设计与硅栅MOS（金属氧化物硅）工艺相结合，使得DRAM芯片在成本上与磁芯相比具有竞争力。
以每比特1美分的价格推出，英特尔的1024位1103 DRAM打开了半导体主存的市场。1972年，IBM率先为其System 370 Model 158开发了一种快速N沟道MOS工艺，并迅速成为全球最大的半导体存储器制造商。
在接下来的30年里，技术的进步加上激进的国际竞争 - 大约每三年将密度提高四倍。一个4K位器件于1973年问世，1976年达到16K，1979年达到64K。第一个千兆位（1,000万位）DRAM于2000年问世。密度的每次增加都相应降低了成本，从而开辟了PC中的新应用，游戏和便携式电子产品。
Intel 1103 1024-bit (1K) DRAM
The Intel 1103 was difficult to build and use, yet a price of 1¢ per bit and a speed compatible with logic circuits made it the first widely used semiconductor main memory device.
有道翻译
英特尔1103 1024位（1K）DRAM
英特尔1103难以构建和使用，但每比特1美分的价格和与逻辑电路兼容的速度使其成为第一个广泛使用的半导体主存储器件。
Mostek 16K DRAM
Mostek continued its leadership in commercial DRAM design by adopting IBM’s patented one transistor/bit memory cell for the 16K generation. It could store about two pages of text.
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Mostek 16K DRAM
Mostek继续在商用DRAM设计方面发挥领导作用，采用IBM专利的16K一代晶体管/位存储器单元。它可以存储大约两页的文本。
Hitachi 256K DRAM, 1985
Encouraged by the Japanese government, Hitachi, NEC, Fujitsu, Mitsubishi and Toshiba formed a research consortium that led to DRAM market dominance at the 64K density level and above.
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日立256K DRAM，1985年
在日本政府的鼓励下，日立，NEC，富士通，三菱和东芝组建了一个研究联盟，导致DRAM市场在64K及以上密度水平上占据主导地位。
Micron 1G DRAM
This chip can hold 1 billion bits (1Gb, 125MB) of information, or enough to store about 25 songs. A special synchronous “DDR3” architecture allows very high speed data transfer.
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美光1G DRAM
该芯片可容纳10亿比特（1Gb，125MB）的信息，或足以存储约25首歌曲。特殊的同步“DDR3”架构允许非常高速的数据传输。
200 mm (8-inch) silicon wafer for flash memory
Wafer vendors started using metric measurements in the early 2000s.
有道翻译
用于闪存的200毫米（8英寸）硅晶圆
晶圆厂商在21世纪初开始使用公制测量。
300 mm (12-inch) silicon wafer for DRAMs
It’s hard to predict how big wafers will be in the future.
有道翻译
用于DRAM的300毫米（12英寸）硅晶圆
很难预测未来晶圆的大小。
2-inch silicon wafer for 4K DRAMs
2-inch wafers were the standard in the early 1970s.
有道翻译
用于4K DRAM的2英寸硅晶圆
在20世纪70年代早期，2英寸晶圆是标准配置。
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